बढ़ते प्रकार
through holes, screw fixation
विवरण
reduce losses and switching noise, be applied in high frequency power conditioning electrical systems, low Vce(sat), Vce(sat) with positive temperature coefficient, maximum junction temperature 150℃, high power density, isolated base plate, standard housing
मॉडल संख्या
AKM2G450SH120KQ
उत्पत्ति के प्लेस
Zhejiang, China
विन्यास
Half Bridge, IGBT transistor, diode
I C (TC=25℃,Tvjmax=150℃)
670A
I C (TC=100℃,Tvjmax=150℃)
450A
Total Power Dissipation
2500W(TC=25℃,Tvjmax=150℃)